发明名称 |
Semiconductor Device and Method of Forming Leadframe Interposer Over Semiconductor Die and TSV Substrate for Vertical Electrical Interconnect |
摘要 |
A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate and first conductive layer formed over the substrate. A first semiconductor die is mounted over the substrate. A second semiconductor die can be mounted over the first semiconductor die. A leadframe interposer has a base plate and a plurality of base leads extending from the base plate. An etch-resistant conductive layer is formed over a surface of the base plate opposite the base leads. The leadframe is mounted to the substrate over the first semiconductor die. An encapsulant is deposited over the substrate and first semiconductor die. The base plate is removed while retaining the etch-resistant conductive layer and portion of the base plate opposite the base leads to electrically isolate the base leads. An interconnect structure is formed over a surface of the substrate opposite the base leads.
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申请公布号 |
US2013154076(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201313766646 |
申请日期 |
2013.02.13 |
申请人 |
STATS CHIPPAC, LTD.;STATS CHIPPAC, LTD. |
发明人 |
CAMACHO ZIGMUND R.;MERILO DIOSCORO A.;BATHAN HENRY D.;ESPIRITU EMMANUEL A. |
分类号 |
H01L23/495 |
主分类号 |
H01L23/495 |
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