发明名称 |
STRUCTURE AND METHOD OF LATCHUP ROBUSTNESS WITH PLACEMENT OF THROUGH WAFER VIA WITHIN CMOS CIRCUITRY |
摘要 |
A method of manufacturing a semiconductor structure includes: forming a trench in a back side of a substrate; depositing a dopant on surfaces of the trench; forming a shallow trench isolation (STI) structure in a top side of the substrate opposite the trench; forming a deep well in the substrate; out-diffusing the dopant into the deep well and the substrate; forming an N-well and a P-well in the substrate; and filling the trench with a conductive material.
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申请公布号 |
US2013154024(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
US201313768050 |
申请日期 |
2013.02.15 |
申请人 |
MACHINES CORPORATION INTERNATIONAL BUSINESS;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAPMAN PHILLIP F.;COLLINS DAVID S.;VOLDMAN STEVEN H. |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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