A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal compound and the conductive binary metal compound is annealed in a reducing atmosphere to promote the formation of a desired crystal structure. The binary metal compound may be a metal oxide. Annealing the metal oxide (i.e. molybdenum oxide) in a reducing atmosphere may result in the formation of a first electrode material (i.e. MoO2) with a rutile-phase crystal structure. This facilitates the formation of the rutile-phase crystal structure when TiO2 is used as the dielectric layer. The rutile-phase of TiO2 has a higher k value than the other possible crystal structures of TiO2 resulting in improved performance of the DRAM capacitor.
申请公布号
US2013154057(A1)
申请公布日期
2013.06.20
申请号
US201313738794
申请日期
2013.01.10
申请人
INTERMOLECULAR, INC.;ELPIDA MEMORY, INC;ELPIDA MEMORY, INC;INTERMOLECULAR, INC.