发明名称 EMI SHIELDING AND THERMAL DISSIPATION FOR SEMICONDUCTOR DEVICE
摘要 A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.
申请公布号 WO2013086741(A1) 申请公布日期 2013.06.20
申请号 WO2011CN84137 申请日期 2011.12.16
申请人 SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD.;SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.;FU, PENG;LUO, SHAN;LU, ZHONG;QIAN, KAIYOU;CHIU, CHIN TIEN;YU, CHEEMAN;TAKIAR, HEM;BAI, YE 发明人 FU, PENG;LUO, SHAN;LU, ZHONG;QIAN, KAIYOU;CHIU, CHIN TIEN;YU, CHEEMAN;TAKIAR, HEM;BAI, YE
分类号 H01L21/56;H01L21/44;H01L23/34;H01L23/552 主分类号 H01L21/56
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