| 发明名称 |
READ BIAS MANAGEMENT TO REDUCE READ ERRORS FOR PHASE CHANGE MEMORY |
| 摘要 |
Subject matter disclosed herein relates to a memory device, and more particularly to read performance of phase change memory. |
| 申请公布号 |
US2013159796(A1) |
申请公布日期 |
2013.06.20 |
| 申请号 |
US201113327673 |
申请日期 |
2011.12.15 |
| 申请人 |
BEDESCHI FERDINANDO;MICRON TECHNOLOGY, INC. |
发明人 |
BEDESCHI FERDINANDO |
| 分类号 |
G06F11/00 |
主分类号 |
G06F11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
