发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate.</p> |
申请公布号 |
WO2013089459(A1) |
申请公布日期 |
2013.06.20 |
申请号 |
WO2012KR10852 |
申请日期 |
2012.12.13 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
SEO, WON CHEOL;CHO, DAE SUNG;LEE, CHUNG HOON;NAM, KI BUM |
分类号 |
H01L33/36;H01L33/22;H01L33/38;H01L33/42 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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