MONITORING STRUCTURE AND MONITORING METHOD FOR SILICON WET ETCHING DEPTH

摘要

Disclosed are a monitoring structure and a relevant monitoring method for the silicon wet etching depth. The monitoring structure includes a wet etched groove formed on a monocrystalline silicon material with at least two top surfaces thereof being rectangular; and the top surface widths of at least two wet etched grooves are Wu and Wl respectively, Wu = du/0.71, and Wl = dl/0.71, where du is the maximum of the wet etching depth to be monitored, and dl is the minimum of the wet etching depth to be monitored. The monitoring method includes: performing anisotropic wet etching on a monocrystalline silicon wafer according to a pattern which has a monitoring graph, forming an etched groove to be monitored and a monitoring structure for monitoring the depth of the etched groove, and then monitoring the obtained monitoring structure, thus realizing monitoring of wet etching depth. The present invention can monitor the etching depth of the etched groove of a product with low costs and can realize higher monitoring accuracy.