发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p>A semiconductor storage device includes a first cell array including a plurality of memory cells that are connected to a first word line and each of which is connected to each member of a first pair of bit lines. The semiconductor storage device also includes a second cell array including a plurality of memory cells that are connected to a second word line and each of which is connected to each member of a second pair of bit lines. The semiconductor storage device further includes a redundant cell array including a plurality of memory cells that are connected to a word line different from the first and the second word lines and each of which is connected to one member of the first pair of bit lines and to one member of the second pair of bit lines.</p>
申请公布号 EP2605272(A1) 申请公布日期 2013.06.19
申请号 EP20100855889 申请日期 2010.08.11
申请人 FUJITSU LIMITED 发明人 UETAKE, TOSHIYUKI
分类号 H01L21/8244;G11C7/00;G11C7/10;G11C7/18;G11C11/412;G11C11/413;G11C11/419;G11C29/00;G11C29/04;H01L27/11 主分类号 H01L21/8244
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