| 摘要 |
A thin film transistor, a display device having the same and a manufacturing method thereof are provided to simplify a process by self-aligning a pattern using a liquid comprising a semiconductor material and a conductive material. A gate electrode(110) is disposed on a substrate(100), and a gate insulating layer(120) is formed on the substrate to isolate the gate electrode. A monomolecular layer(130) has a hydrophilic portion(130a) formed on the gate insulating layer corresponding to the gate electrode and having a hydrophilic group, and a hydrophobic portion(130b) formed around the hydrophilic group and having a hydrophobic group. A self-aligned semiconductor layer pattern(140) is self-aligned on the hydrophilic portion. A source electrode(150) is disposed on the semiconductor layer pattern, and a drain electrode(160) is connected to the semiconductor layer pattern. |
