发明名称 FORMING METHOD OF MAGNETIC PATTERN AND MAGNETIC PATTERN LAYER COMPRISING THE SAME
摘要 PURPOSE: A magnetism pattern layer forming method and a magnetism pattern layer are provided to form a magnetism pattern and an antiferromagnetic pattern by forming a magnetism pattern of a nanosize with a selective reduction. CONSTITUTION: An antiferromagnetic pattern(101) is formed as nano patterns of various intervals according to a mask pattern. The reducing force of a second nonmagnetic layer is different from the reducing force of a first nonmagnetic layer. A hydrogen ion passing through the second nonmagnetic layer is emitted to the first nonmagnetic layer. The first nonmagnetic layer is composed of materials with a weak reducing force. The nonmagnetic layers form a plurality of antiferromagnetic and ferromagnetic patterns(102).
申请公布号 KR20130065060(A) 申请公布日期 2013.06.19
申请号 KR20110131756 申请日期 2011.12.09
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 HONG, JONGI II;KIM, SANG HOON
分类号 G11B5/62;G11B5/84 主分类号 G11B5/62
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