发明名称 |
TANTALUM SPUTTERING TARGET |
摘要 |
<p>Provided is a tantalum sputtering target, in which 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and of which the purity excluding boron and gas components is 99.998% or higher. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity).</p> |
申请公布号 |
EP2604718(A1) |
申请公布日期 |
2013.06.19 |
申请号 |
EP20110816297 |
申请日期 |
2011.07.21 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
SENDA, SHINICHIRO;FUKUSHIMA, ATSUSHI |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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