| 摘要 |
Method for producing a wafer of a first semiconductor material (515). Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate (102) of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer (510) of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer (530) of the first material on the first layer. |
