MANUFACTURING METHOD OF MASK BLANK, MANUFACTURING METHOD OF TRANSFER MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a mask blank, a manufacturing method of a transferring mask, and a manufacturing method of a semiconductor device are provided to reduce the film stress of a thin film by forming a thin film containing tantalum. CONSTITUTION: A manufacturing method of a mask blank includes the following steps of: preparing a glass substrate(1) with a mirror-polished main surface; irradiating the glass substrate with light containing an infrared ray wavelength; and forming a thin film on the main surface of the glass substrate. The thin film contains tantalum and substantially no hydrogen. The light irradiated to the glass substrate includes wavelength 1.3 micrometers or more. The light is emitted from a halogen heater. The thin film is formed by being adjacent to the main surface of the glass substrate.