| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device using a damascene process is provided to improve a manufacturing yield by forming a storage node contact plug and a bit line without a process etching a hole type contact mask and the bit line. CONSTITUTION: Multiple separation patterns(25B) are formed on a lower structure. Multiple conductive lines are formed and bury multiple trenches. An opened part is formed by removing a part of a sacrificial pattern in a direction orthogonal to the conductive line. A separation pattern burying the opened part is formed. A contact hole defined by the multiple separation patterns and conductive lines is formed by removing a sacrificial layer pattern. A plug buried in the contact hole is formed.</p> |
