发明名称 |
SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PURPOSE: A substrate for a semiconductor light emitting device and a manufacturing method thereof are provided to supply a protrusion which has a depression side and an extrusion side, in a growing top side, thereby providing a substrate which has a protrusion with a scattering side. CONSTITUTION: A substrate(10) for a semiconductor light emitting device comprises a top side and a protrusion(11a). A semiconductor layer(20) is grown on the top side. The protrusion is formed on the top side and has a depression side and an extrusion side. The depression sides and the extrusion sides are alternatively formed on the protrusion.
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申请公布号 |
KR20130065680(A) |
申请公布日期 |
2013.06.19 |
申请号 |
KR20130058342 |
申请日期 |
2013.05.23 |
申请人 |
SEMICON LIGHT CO., LTD. |
发明人 |
PARK, EUN HYUN;JEON, SOO KUN;KIM, JONG WON;JEONG, GWANG WON |
分类号 |
H01L33/20;H01L33/22 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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