PATTERN FOR MEASURING ELECTRICAL AND OPTICAL PROPERTIES OF EPI-WAFER, METHOD OF FABRICATING THE SAME AND SYSTEM FOR FABRICATING THE SAME

摘要

PURPOSE: A pattern for measuring electrical and optical properties of an epi-wafer, a method which forms the pattern, and a system for forming the same are provided to measure electrical and optical properties with reliability in an epi-wafer state before performing a chip manufacturing process or a packaging process. CONSTITUTION: A first conductivity type semiconductor layer(23) is positioned on a substrate. A second conductivity type semiconductor layer(27) is positioned on the first conductivity type semiconductor layer. A measurement pattern includes a separation groove, a division groove(33), and an opening portion(30). The separation groove surrounds a working area. The division groove divides the second conductivity type semiconductor layer in the area which is surrounded by the separation groove into a first area and a second area. The opening portion exposes the first conductivity type semiconductor layer in the first area.