| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electric short suppressed between adjacent electrodes, and to provide a method of manufacturing the same. SOLUTION: Denoting the pitch of a metal post 26 of a mother chip 10 as P μm, the height of a metal post 26 of a daughter chip 20 is set to P/6 to P/2 μm. Gold is exposed at least over the entire surface of the metal post 26 of the daughter chip 20. While heating at high temperature above the fusion point of a solder film 17 of the mother chip 10, the solder film 17 of the mother chip 10 and the metal post 26 of the daughter chip 20 are brought into contact and heat-crimped to connect the daughter chip 20 to the mother chip 10. COPYRIGHT: (C)2009,JPO&INPIT
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