| 摘要 |
<p>PURPOSE: A semiconductor device manufacturing method, a substrate processing method, a substrate processing apparatus, a recording medium are provided to improve the film growing speed rate of SiOCN film or SiOC film, thereby improving the productivity when the film is growing. CONSTITUTION: A source gas is supplied into a wafer within a process chamber. A first reaction gas is supplied to the wafer within the process chamber. A first layer is formed on the wafer by reciprocally performing a supply process of the source gas and the first reaction gas in the predetermined number. A second layer is formed by supplying the source gas and a second reaction gas to the wafer within the process chamber. A hydrogen containing gas is supplied to the wafer within the process chamber and the surface of the second layer is reformed. A cycle including the processes is repeated and a thin film of the predetermined thickness is formed on the wafer. [Reference numerals] (AA) 1 cycle; (BB) Charge a wafer; (CC) Load a boat; (DD) Control a pressure; (EE) Control a temperature; (FF) Supply HCDS gas; (GG,JJ,MM,PP) Remove residual gas; (HH) Step 1; (II) Supply TEA gas; (KK) Step 2; (LL) Supply O_2 gas; (NN) Step 3; (OO) Supply H_2 gas supply; (QQ) Step 4; (RR) Is it executed n times?; (SS) Fuzzy; (TT) Return atmospheric pressure; (UU) Unload the boat; (VV) Discharge the wafer</p> |
