| 摘要 |
PURPOSE: A light emitting device is provided to improve luminous efficiency by promoting the horizontal and vertical transfer of holes which move from a second conductive semiconductor layer to an active layer. CONSTITUTION: A second conductive semiconductor layer(126) is arranged on a first conductive semiconductor layer(122). An active layer(124) is arranged between the first conductive semiconductor layer and the second conductive semiconductor layer. An electron barrier layer(125-1) is arranged between the active layer and the second conductive semiconductor layer. The electron barrier layer includes at least one current spreading layer(201-1-201-n) having a superlattice structure. The current spreading layer includes a first horizontal transfer layer(210-1-210-n) and a first vertical transfer layer(220-1-220-n).
|
