| 摘要 |
A non-volatile memory device includes a first electrode, a resistive switching material stack overlying the first electrode. The resistive switching material stack comprising a first resistive switching material and a second resistive switching material. The second resistive switching material overlies the first electrode and the first resistive switching material overlying the second resistive switching material. The first resistive switching material is characterized by a first switching voltage having a first amplitude. The second resistive switching material is characterized by a second switching voltage having a second amplitude no greater than the first switching voltage. A second electrode comprising at least a metal material physically and electrically in contact with the first resistive switching material overlies the first resistive switching material. |
