发明名称 |
Capacitorless DRAM on bulk silicon |
摘要 |
A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate is provided, and an array of silicon studs is defined within the silicon substrate. An insulator layer is defined atop at least a portion of the silicon substrate, and between the silicon studs. A silicon-over-insulator layer is defined surrounding the silicon studs atop the insulator layer, and a capacitorless DRAM is formed within and above the silicon-over-insulator layer.
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申请公布号 |
US8466517(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US201213445711 |
申请日期 |
2012.04.12 |
申请人 |
MATHEW SURAJ;TRIVEDI JIGISH D.;MICRON TECHNOLOGY, INC. |
发明人 |
MATHEW SURAJ;TRIVEDI JIGISH D. |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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