| 摘要 |
On a main surface of a semiconductor substrate, an N- semiconductor layer is formed with a dielectric portion including relatively thin and thick portions interposed therebetween. In a predetermined region of the N- semiconductor layer, an N-type impurity region and a P-type impurity region are formed. A gate electrode is formed on a surface of a portion of the P-type impurity region located between the N-type impurity region and the N- semiconductor layer. In a predetermined region of the N- semiconductor layer located at a distance from the P-type impurity region, another P-type impurity region is formed. As a depletion layer block portion, another N-type impurity region higher in impurity concentration than the N- semiconductor layer is formed from the surface of the N- semiconductor layer to the dielectric portion.
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