| 摘要 |
PURPOSE: A field effect transistor using N-doped graphene and a manufacturing method thereof are provided to reduce an off current and maintain a high charge mobility by doping graphene with inorganic materials. CONSTITUTION: An oxide layer(200) is formed on a base material(100). A source electrode(300) and a drain electrode(400) are formed on both sides of the oxide layer. A channel layer(500) is electrically connected to the source electrode and the drain electrode. The channel layer includes N-doped graphene by inorganic materials(600). The inorganic materials include nanoparticles of metal, metal oxide, metal sulfide, and metal halide. The size of the inorganic material is 1 to 100 nm. |
