发明名称 |
METHOD OF FORMING TeO2 NANOWIRE |
摘要 |
PURPOSE: A TeO2 nanowire forming method is provided to control the diameter and speed of growth to gain regular TeO2 nanowire with a small diameter. CONSTITUTION: A TeO2 nanowire forming method comprises the following steps. In a chamber(100) for growth, gold(Au) coated plate(110) and a tellurium(Te) source are arranged but they are not connected. The inside of the chamber is heated at a temperature over 330°C and below 400°C to grow TeO2 nanowire(150) on the plate. The distance from the plate to the tellurium is 1-10mm. The tellurium source is powder type and is prepared on a plate(120). |
申请公布号 |
KR20130064484(A) |
申请公布日期 |
2013.06.18 |
申请号 |
KR20110131118 |
申请日期 |
2011.12.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
KIM, HYUN JIN;KIM, SUNG MIN;CHA, SEUNG NAM;YAN CHANGZENG;KANG, DAE JOON |
分类号 |
C01B19/04;B82B3/00;B82Y40/00 |
主分类号 |
C01B19/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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