THE PLANAR GATE IGBT WITH NMOS

摘要

PURPOSE: A planar gate IGBT with an nMOS is provided to improve the efficiency of electron injections by inserting an nMOS into a planar gate. CONSTITUTION: A P+ collector region(20) is positioned on the lower part of an N drift layer(10). An N+ region(40) is positioned in the lower sides of the N drift layer. A first emitter electrode(50) is positioned on the upper sides of the N drift layer. A planar gate electrode(60) is positioned between the upper part of the N drift layer and the first emitter electrode. A second emitter electrode(70) is positioned between the planar gate electrodes.