| 发明名称 |
Light emitting diodes (LEDs) with improved light extraction by roughening |
| 摘要 |
Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
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| 申请公布号 |
US8466479(B2) |
申请公布日期 |
2013.06.18 |
| 申请号 |
US20110986946 |
申请日期 |
2011.01.07 |
| 申请人 |
SEMILEDS OPTOELECTRONICS CO., LTD.;CHU CHEN-FU;CHENG HAO-CHUN;FAN FENG-HSU;LIU WEN-HUANG;CHENG CHAO-CHEN |
发明人 |
CHU CHEN-FU;CHENG HAO-CHUN;FAN FENG-HSU;LIU WEN-HUANG;CHENG CHAO-CHEN |
| 分类号 |
H01L33/00;H01L21/00;H01L33/08;H01L33/22 |
主分类号 |
H01L33/00 |
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