发明名称 |
III-V SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING THE SAME |
摘要 |
Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation. |
申请公布号 |
KR20130064725(A) |
申请公布日期 |
2013.06.18 |
申请号 |
KR20127025500 |
申请日期 |
2011.03.23 |
申请人 |
SOITEC;ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY |
发明人 |
LINDOW ED;ARENA CHANTAL;BERTRAM RONALD;DATTA RANJAN;MAHAJAN SUBHASH |
分类号 |
H01L21/20;H01L21/203;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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