发明名称 |
Method of manufacturing semiconductor device, and semiconductor device |
摘要 |
A gate insulating film is formed on a substrate. Next, a gate electrode film is formed on the gate insulating film. A mask film is formed on a portion of the gate electrode film. The gate electrode film is selectively removed by etching using the mask film as a mask. A gate sidewall film is formed so as to be in contact with the lateral surfaces of the mask film and the gate electrode film. The mask film is formed of a laminated film in which at least a first film, a second film and a third film are laminated in this order. The second film has a higher etching selectivity ratio than that of the third film with respect to the gate sidewall film. The third film has a higher etching selectivity ratio than that of the second film with respect to the gate electrode film.
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申请公布号 |
US8466053(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US201113074569 |
申请日期 |
2011.03.29 |
申请人 |
MATSUKI TAKEO;MISE NOBUYUKI;RENESAS ELECTRONICS CORPORATION |
发明人 |
MATSUKI TAKEO;MISE NOBUYUKI |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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