| 摘要 |
PURPOSE: A non-volatile memory device is provided to perform a stable pumping operation regardless of voltage variation by independently controlling various pump circuits along an operation section. CONSTITUTION: A first voltage generating unit(110) increases a first output node to a first voltage level in a first operation section and maintains a first output node in the first voltage level in a second operation section. A second voltage generating unit(120) increases a transmission node to the first voltage level in the first operation section and maintains the transmission node in the first voltage level in the second operation section. A third voltage generating unit(130) increases a second output node to a second voltage level by using a voltage level of a source node as a reference source voltage level in the second operation section. [Reference numerals] (110) First voltage generating unit; (120) Second voltage generating unit; (130) Third voltage generating unit; (160) First oscillation signal generating unit; (170) Second oscillation signal generating unit |
