发明名称 Co-implant for backside illumination sensor
摘要 A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
申请公布号 US8466530(B2) 申请公布日期 2013.06.18
申请号 US201113174073 申请日期 2011.06.30
申请人 CHEN CHENG-TSUNG;HUANG HSUN-YING;CHANG YUNG-CHENG;YEH YUNG-FU;CHEN YU-PING;LIANG CHI-YUAN;LU SHOU SHU;CHEN JUAN-LIN;CHEN JIA-REN;SHEN HORNG-DAW;HSIEH CHI-HSUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN CHENG-TSUNG;HUANG HSUN-YING;CHANG YUNG-CHENG;YEH YUNG-FU;CHEN YU-PING;LIANG CHI-YUAN;LU SHOU SHU;CHEN JUAN-LIN;CHEN JIA-REN;SHEN HORNG-DAW;HSIEH CHI-HSUN
分类号 H01L31/0232 主分类号 H01L31/0232
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