发明名称 |
Co-implant for backside illumination sensor |
摘要 |
A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region. |
申请公布号 |
US8466530(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US201113174073 |
申请日期 |
2011.06.30 |
申请人 |
CHEN CHENG-TSUNG;HUANG HSUN-YING;CHANG YUNG-CHENG;YEH YUNG-FU;CHEN YU-PING;LIANG CHI-YUAN;LU SHOU SHU;CHEN JUAN-LIN;CHEN JIA-REN;SHEN HORNG-DAW;HSIEH CHI-HSUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHENG-TSUNG;HUANG HSUN-YING;CHANG YUNG-CHENG;YEH YUNG-FU;CHEN YU-PING;LIANG CHI-YUAN;LU SHOU SHU;CHEN JUAN-LIN;CHEN JIA-REN;SHEN HORNG-DAW;HSIEH CHI-HSUN |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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