| 摘要 |
A semiconductor memory device includes a pre-charger configured to pre-charge a first pair of differential bus lines SIO and SIOb to a target voltage level, an amplifier configured to amplify a signal loaded on the first pair of the differential bus lines SIO and SIOb based on a drain bias voltage Vb and transfer an amplified signal to a second pair of differential bus lines LIO and LIOb, and a drain bias voltage generator configured to generate the drain bias voltage Vb.
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