发明名称 Semiconductor memory device
摘要 In a semiconductor layer, information is written by applying a first potential to a first electrode, applying a second potential that is lower than the first potential to all of back gate electrodes, applying a third potential that is higher than the first potential to the first to (i-1)th front gate electrodes, and applying a fourth potential that is between the second and third potentials to the ith and subsequent front gate electrodes, where "i" is a positive integer and identifies a specific location to which information is to be written.
申请公布号 US8467241(B2) 申请公布日期 2013.06.18
申请号 US201113246996 申请日期 2011.09.28
申请人 FUJIKI JUN;SAKUMA KIWAMU;YASUDA NAOKI;NAKABAYASHI YUKIO;SAITOH MASUMI;KABUSHIKI KAISHA TOSHIBA 发明人 FUJIKI JUN;SAKUMA KIWAMU;YASUDA NAOKI;NAKABAYASHI YUKIO;SAITOH MASUMI
分类号 G11C11/34 主分类号 G11C11/34
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