发明名称 |
Thin film transistor having an oxide semiconductor bilayer, method of manufacturing the same and flat panel display device having the same |
摘要 |
Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.
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申请公布号 |
US8466465(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US20090382743 |
申请日期 |
2009.03.23 |
申请人 |
JEONG JONG-HAN;AHN TAE-KYUNG;JEONG JAE-KYEONG;PARK JIN-SUNG;LEE HUN-JUNG;SHIN HYUN-SOO;MO YEON-GON;SAMSUNG DISPLAY CO., LTD. |
发明人 |
JEONG JONG-HAN;AHN TAE-KYUNG;JEONG JAE-KYEONG;PARK JIN-SUNG;LEE HUN-JUNG;SHIN HYUN-SOO;MO YEON-GON |
分类号 |
H01L29/04;H01L27/108;H01L29/10;H01L29/12;H01L29/15;H01L29/76;H01L31/036;H01L31/0376;H01L31/112;H01L31/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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