发明名称 |
Capping layer for reduced outgassing |
摘要 |
A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.
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申请公布号 |
US8466073(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US201213448624 |
申请日期 |
2012.04.17 |
申请人 |
WANG LINLIN;MALLICK ABHIJIT BASU;INGLE NITIN K.;APPLIED MATERIALS, INC. |
发明人 |
WANG LINLIN;MALLICK ABHIJIT BASU;INGLE NITIN K. |
分类号 |
H01L21/316 |
主分类号 |
H01L21/316 |
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地址 |
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