| 摘要 |
An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.
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