发明名称 |
Modern hydride vapor-phase epitaxy system and methods |
摘要 |
Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled to the reactant source chamber. The reactant source chamber may be configured to create a reactant gas through a chemical reaction between a solid or liquid precursor and a different precursor gas. The reactant source chamber can be configured to operate at a temperature T(M) significantly above room temperature. The reactant gas can be chemically unstable at or near room temperature. The susceptor is configured to receive a substrate and maintain the substrate at a substrate temperature T(S). The growth chamber includes walls can be configured to operate at a temperature T(C) such that T(M), T(S) are greater than T(C).
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申请公布号 |
US8465587(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US20090649937 |
申请日期 |
2009.12.30 |
申请人 |
SOLOMON GLENN S.;MILLER DAVID J.;CBL TECHNOLOGIES, INC. |
发明人 |
SOLOMON GLENN S.;MILLER DAVID J. |
分类号 |
C30B21/02 |
主分类号 |
C30B21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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