发明名称 |
Single gate inverter nanowire mesh |
摘要 |
A FET inverter is provided that includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels, wherein the source and drain regions of one or more of the device layers are doped with an n-type dopant and the source and drain regions of one or more other of the device layers are doped with a p-type dopant; a gate common to each of the device layers surrounding the nanowire channels; a first contact to the source regions of the one or more device layers doped with an n-type dopant; a second contact to the source regions of the one or more device layers doped with a p-type dopant; and a third contact common to the drain regions of each of the device layers. Techniques for fabricating a FET inverter are also provided.
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申请公布号 |
US8466451(B2) |
申请公布日期 |
2013.06.18 |
申请号 |
US201113316515 |
申请日期 |
2011.12.11 |
申请人 |
CHANG JOSEPHINE;CHANG PAUL;GUILLORN MICHAEL A.;SLEIGHT JEFFREY;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE;CHANG PAUL;GUILLORN MICHAEL A.;SLEIGHT JEFFREY |
分类号 |
H01L29/06;H01L27/105;H01L27/148;H01L31/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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