| 发明名称 |
Methods of adjusting dimensions of resist patterns |
| 摘要 |
Methods of adjusting dimensions of resist patterns are provided. The methods allow for control of photoresist pattern dimensions and find particular applicability in resist pattern rework in semiconductor device manufacturing.
|
| 申请公布号 |
US8465901(B2) |
申请公布日期 |
2013.06.18 |
| 申请号 |
US20100825096 |
申请日期 |
2010.06.28 |
| 申请人 |
BAE YOUNG CHEOL;CARDOLACCIA THOMAS;LIU YI;ROHM AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
BAE YOUNG CHEOL;CARDOLACCIA THOMAS;LIU YI |
| 分类号 |
G03F7/00;G03F7/004;G03F7/028;G03F7/40 |
主分类号 |
G03F7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
