发明名称 Multi-chip semiconductor devices having non-volatile memory devices therein
摘要 A flash memory device and a flash memory system are disclosed. The flash memory device includes a first non-volatile memory including a plurality of page data cells, storing page data, and reading and outputting the stored page data when a read command is applied from an external portion; and a second non-volatile memory including a plurality of spare data cells respectively adjacent to the plurality of page data cells, storing spare data, scanning the spare data and temporarily storing corresponding information when a file system is mounted, reading and outputting the stored spare data when the read command is applied.
申请公布号 US8467244(B2) 申请公布日期 2013.06.18
申请号 US20100844621 申请日期 2010.07.27
申请人 JEON BYUNG-GIL;LEE KANG-WOON;MIN BYUNG-JUN;LEE HAN-JOO;SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON BYUNG-GIL;LEE KANG-WOON;MIN BYUNG-JUN;LEE HAN-JOO
分类号 G11C16/04 主分类号 G11C16/04
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