| 摘要 |
Techniques for producing atomic step-free silicon carbide surfaces are provided. In one aspect, a method for eliminating atomic steps from a silicon carbide surface is provided. The method comprises the following step. The silicon carbide and a silicon-containing gas are contacted at a temperature, background pressure, and for a length of time sufficient to re-arrange the silicon carbide to an atomic step-free surface. The silicon carbide surface can be the top of a mesa or the bottom of a hole patterned in a silicon carbide wafer.
|
