| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of obtaining a high gain while suppressing current collapse, and provide a manufacturing method of the compound semiconductor device. <P>SOLUTION: A compound semiconductor device comprises: a substrate 11; a nitride compound semiconductor laminate structure 12 formed above the substrate 11; and a gate electrode 13, a source electrode 14a and a drain electrode 14d, which are formed above the compound semiconductor laminate structure 12. The compound semiconductor device further comprises a recess 32 formed on a surface of the compound semiconductor laminate structure 12 and between the gate electrode 13 and the drain electrode 14d in plan view. <P>COPYRIGHT: (C)2013,JPO&INPIT |
