| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat treatment method capable of heating a substrate to necessary temperature by irradiating the substrate with flash light while preventing cracks of the substrate, and a heat treatment device. <P>SOLUTION: A semiconductor wafer implanted with impurities is heated to a pre-heating temperature T1, then its surface is heated to a target temperature T2 by radiating flash light, and its surface temperature is kept substantially at the target temperature for a predetermined time by continuing irradiation with the flash light. In this case, an irradiation time of the flash light in a flash heating process is set to be longer than a heat conduction time required for heat conduction from the surface of the semiconductor wafer to its rear surface, and during irradiation of the flash light, a difference between the surface temperature and the rear surface temperature of the semiconductor wafer is usually set to be below half the rising temperature from the pre-heating temperature T1 to the target temperature T2. Therefore a concentration of stress caused by a thermal expansion difference between the surface and the rear surface of the semiconductor wafer, can be alleviated, and the cracks of the semiconductor wafer can be prevented. <P>COPYRIGHT: (C)2013,JPO&INPIT |
