| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent device characteristics, and improved yield. <P>SOLUTION: A semiconductor device includes a capacitor having a lower electrode, and a support film provided to contact an outer wall lateral face of the lower electrode. A top face of the lower electrode lies at a position lower than a top face of the support film. A semiconductor device manufacturing method comprises: forming a cylinder hole so as to penetrate the support film after forming the support film; retreating the top face of the lower electrode so as to lie at a height between the top face and an undersurface of the support film after forming the lower electrode on an internal surface of the cylinder hole; and sequentially forming a capacitance insulation film and an upper electrode on the lower electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
