| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal-bridge-type memory device capable of high integration of memory cells. <P>SOLUTION: A metal-bridge-type memory device includes: a first wiring layer including a plurality of first wiring lines extending in a first direction; a second wiring layer including a plurality of second wiring lines extending in a second direction crossing the first direction; a semiconductor electrode provided between the first wiring layer and the second wiring layer, and having an n-type conductivity type; a plurality of ion diffusion layers provided at every most adjacent portions of the first wiring lines and the second wiring lines between the semiconductor electrode and the second wiring layer; and a metal electrode provided between the ion diffusion layer and the second wiring lines. The semiconductor electrode is continuously provided over the plurality of most adjacent portions. <P>COPYRIGHT: (C)2013,JPO&INPIT |
