SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device is provided to reduce leakage current due to a support part by forming an amorphous metal oxide. CONSTITUTION: Electrode structures(180) are repetitively arranged on a substrate(100) in an X direction and a Y direction. A first support part(160) and a second support part(170) are positioned between the electrode structures. A first and a second support part include the first support layer(162,172), a second support layer(164,174), and a third support layer(166,176). The first support layer and the third support layer include an amorphous metal oxide. The thickness(T12) of the second support layer is the same as or larger than thicknesses(T11,T13) of the first support layer and the third support layer.