发明名称 SPUTTERING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering apparatus which can achieve film deposition of high quality while preventing the damage of targets. <P>SOLUTION: The sputtering apparatus includes: a film deposition chamber 1; a power source 5 for generating plasma on the front face sides of targets 2a, 2b arranged at the inside of the film deposition chamber 1; permanent magnets 7a, 7b for generating a confinement field; an erosion region 9 located at the inside of the confinement field and generating erosion at an object with the plasma; and sticking prevention boards 6a, 6b arranged around the targets 2a, 2b arranged at the inside of the film deposition chamber 1. The targets 2a, 2b have a shape such that the targets front faces are located at the inside of the erosion region 9, the sticking prevention boards 6a, 6b are located at the laterals of target front faces, further, the front faces of the sticking prevention boards 6a, 6b are located at the positions along the target front faces or ahead of the target front faces, and the back faces of the sticking prevention boards 6a, 6b are located at the positions along the target front faces or behind the target front faces. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013119654(A) 申请公布日期 2013.06.17
申请号 JP20110268496 申请日期 2011.12.08
申请人 JAPAN STEEL WORKS LTD:THE 发明人 MASHITA TORU;TAKEDA ETSUJI;UCHIDA RYOHEI;CHIBA MASAKI
分类号 C23C14/34;C23C14/35;H05H1/24;H05H1/46 主分类号 C23C14/34
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