| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a groove 10e in scribe regions 10d of a wafer (semiconductor wafer) 10 from a surface 3a side by a chemical reaction treatment (etching treatment); and grinding a rear face 10b on the side opposite to the surface 3a after forming the groove 10e, to isolate a plurality of chip regions 10c arranged among the scribe regions 10d. In this method, a metal pattern 3f is formed on the surface 3a of the scribe region 10d. In the step of forming the groove 10e, the metal pattern 3f is not removed but remains. <P>COPYRIGHT: (C)2013,JPO&INPIT |
