发明名称 White Light-emitting diode and Method of Manufacturing the same
摘要 PURPOSE: A light emitting device and a manufacturing method thereof are provided to form a wavelength conversion layer having a uniform thickness on an LED chip and to provide the light emitting device having uniform color coordinates. CONSTITUTION: A wavelength conversion layer(200) is formed on a semiconductor structure(100) with a uniform thickness. The wavelength conversion layer changes the short wavelength light emitted from the semiconductor structure into long wavelength light. A transparent substrate(300) is adhered to the upper side of the wavelength conversion layer to maximize optical extraction. A diffusive bead diffuses the light into the transparent substrate. An n-electrode(180) and a p-electrode(190) are formed in the lower part of the semiconductor structure.
申请公布号 KR101273481(B1) 申请公布日期 2013.06.17
申请号 KR20110074018 申请日期 2011.07.26
申请人 发明人
分类号 H01L33/50 主分类号 H01L33/50
代理机构 代理人
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