| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lateral diffusion width evaluation method of a diffusion region formed in a semiconductor device, which can measure a lateral diffusion width at a predetermined depth from a surface of a diffusion region at a depth of approximately 100 μm with high accuracy, and which can measure an in-plane distribution of a lateral diffusion width on a wafer with high efficiency. <P>SOLUTION: A lateral diffusion width evaluation method comprises grinding to a predetermined depth T1, a rear face 1a of a wafer 1 in which a deep diffusion region 2 is formed; polishing or etching the rear face 1a of the wafer 1 to expose the diffusion region 2; stain-etching the exposed diffusion region 2; and subsequently, measuring a lateral diffusion width W1 of the stain-etched diffusion region 2. In this way, the lateral diffusion width W1 at the predetermined depth T1 can be measured with high accuracy. <P>COPYRIGHT: (C)2013,JPO&INPIT |
