发明名称 NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a high-quality nitride semiconductor substrate which inhibits scratch of a nitride semiconductor substrate caused by chipping occurring at an edge part of a nitride semiconductor crystal in a mechanical polishing process in a nitride semiconductor substrate manufacturing process. <P>SOLUTION: A nitride semiconductor substrate manufacturing method comprises performing polishing until a dark point can be identified on a periphery of a nitride semiconductor crystal by cathode luminescence observation at the periphery before a second mechanical polishing process of removing an affected layer, thereby to provide a high-quality nitride semiconductor substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013120795(A) 申请公布日期 2013.06.17
申请号 JP20110267080 申请日期 2011.12.06
申请人 MITSUBISHI CHEMICALS CORP 发明人 TASHIRO MASAYUKI;OTA HIROKI
分类号 H01L21/304;B24B1/00 主分类号 H01L21/304
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