发明名称 |
NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-quality nitride semiconductor substrate which inhibits scratch of a nitride semiconductor substrate caused by chipping occurring at an edge part of a nitride semiconductor crystal in a mechanical polishing process in a nitride semiconductor substrate manufacturing process. <P>SOLUTION: A nitride semiconductor substrate manufacturing method comprises performing polishing until a dark point can be identified on a periphery of a nitride semiconductor crystal by cathode luminescence observation at the periphery before a second mechanical polishing process of removing an affected layer, thereby to provide a high-quality nitride semiconductor substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013120795(A) |
申请公布日期 |
2013.06.17 |
申请号 |
JP20110267080 |
申请日期 |
2011.12.06 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
TASHIRO MASAYUKI;OTA HIROKI |
分类号 |
H01L21/304;B24B1/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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